MRF6S18100NR1 MRF6S18100NBR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1930--1990 MHz
Z9 0.485″
x 1.000″
Microstrip
Z10* 0.590″
x 0.083″
Microstrip
Z11* 0.805″
x 0.083″
Microstrip
Z13, Z14 0.870″
x 0.080″
Microstrip
PCB Taconic TLX8--0300, 0.030″,
εr
=2.55
*Variable for tuning.
Z1, Z12 0.250″
x 0.083″
Microstrip
Z2* 0.450″
x 0.083″
Microstrip
Z3* 0.535″
x 0.083″
Microstrip
Z4* 0.540″
x 0.083″
Microstrip
Z5 0.365″
x 1.000″
Microstrip
Z6 1.190″
x 0.080″
Microstrip
Z7, Z8 0.115″
x 1.000″
Microstrip
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C1
C2
C3
C4
C5
R1
Z1
Z2
Z3
C6
Z8
R2
Z6
R3
Z7
Z13
Z14
VSUPPLY
C11
C12
C13
C7
C8
Z4
Z5
Z9
C10
Z10
Z11
Z12
C14
+
C9
Table 6. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1930--1990 MHz
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
12065C104KAT
AVX
C2, C3, C6, C10, C11
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C5, C12, C13
4.7
μF Chip Capacitors
C4532X5R1H475MT
TDK
C7
0.3 pF Chip Capacitor
ATC700B0R3BT500XT
ATC
C8
1.3 pF Chip Capacitor
ATC100B1R3BT500XT
ATC
C9
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C14
470
μF, 63 V Electrolytic Capacitor, Radial
EKME630ELL471MK25S
Multicomp
R1, R2
10 k?, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10
?, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6S18140HSR5
MOSFET RF N-CH 28V ESD NI880S
MRF6S19060GNR1
MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100GNR1
MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100HSR5
MOSFET RF N-CHAN 28V 22W NI-780S
MRF6S19120HSR5
MOSFET RF N-CHAN 28V 19W NI-780S
MRF6S19140HSR5
MOSFET RF N-CHAN 28V 29W NI-880S
MRF6S19200HSR5
MOSFET RF N-CH 56W 28V NI780S
MRF6S20010GNR1
MOSFT RF N-CH 28V 10W TO270-2 GW
相关代理商/技术参数
MRF6S18100NR1_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3
功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18140HR3_09
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5
功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18140HSR3
功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18140HSR5
功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S1900HSR3
制造商:Freescale Semiconductor 功能描述:
MRF6S19060GN
制造商:Freescale Semiconductor 功能描述:MRF6S19060GN - Bulk